Development of high-power green light emitting diode dies in piezoelectric GaInN/GaN

Increasing emission power and efficiency in green light emitting diodes is one of the big challenges towards all-solidstate lighting. The prime challenge lies in the combination of extension of wavelength from 470 nm blue to 525 nm green while maintaining the emission power level. Commonly a steep decrease in power is observed. In a broad development effort we have been able to ameliorate that decrease significantly and obtain bare die performance at 525 nm of 1.6 mW at 20 mA for 350x350 µm 2 dies. Here we discuss critical die performance and wafer yield aspects of our optimization approach to the active layer of the GaInN/GaN quantum wells.