Overview and Future Challenge of Ferroelectric Random Access Memory Technologies

Authors :: Kazuhiro Kaibara
Shinzo Koyama
Hiroyuki Tanaka
Kazunori Isogai
Yoshihisa Kato
Yasuhiro Shimada
Takayoshi Yamada
Yukihiro Kaneko
Source :: Japanese Journal of Applied Physics. 46:2157-2163
Publication Year :: 2007
Publisher :: IOP Publishing, 2007.
Abstract: We have developed a low-temperature formation technique for ferroelectrics (

Subjects :: Random access memory
Materials science
Physics and Astronomy (miscellaneous)
Annealing (metallurgy)
business.industry
General Engineering
General Physics and Astronomy
Nanotechnology
Chemical vapor deposition
Ferroelectricity
law.invention
Capacitor
CMOS
law
Ferroelectric RAM
Optoelectronics
business
Voltage

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