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High-Performance WSe2 Photodetector Based on a Laser-Induced p–n Junction
- Source :
- ACS Applied Materials & Interfaces. 11:43330-43336
- Publication Year :
- 2019
- Publisher :
- American Chemical Society (ACS), 2019.
-
Abstract
- Two-dimensional heterojunctions exhibit many unique features in nanoelectronic and optoelectronic devices. However, heterojunction engineering requires a complicated alignment process and some defects are inevitably introduced during material preparation. In this work, a laser scanning technique is used to construct a lateral WSe2 p-n junction. The laser-scanned region shows p-type behavior, and the adjacent region is electrically n-doped with a proper gate voltage. The laser-oxidized product WOx is found to be responsible for this p-type doping. After laser scanning, WSe2 displays a change from ambipolar to unipolar p-type property. A significant photocurrent emerges at the p-n junction. Therefore, a self-powered WSe2 photodetector can be fabricated based on this junction, which presents a large photoswitching ratio of 106, a high photoresponsivity of 800 mA W-1, and a short photoresponse time with long-term stability and reproducibility. Therefore, this selective laser-doping method is prospective in future electronic applications.
- Subjects :
- Photocurrent
Materials science
Laser scanning
Ambipolar diffusion
business.industry
Doping
Photodetector
Heterojunction
02 engineering and technology
010402 general chemistry
021001 nanoscience & nanotechnology
Laser
01 natural sciences
0104 chemical sciences
law.invention
law
Optoelectronics
General Materials Science
0210 nano-technology
business
p–n junction
Subjects
Details
- ISSN :
- 19448252 and 19448244
- Volume :
- 11
- Database :
- OpenAIRE
- Journal :
- ACS Applied Materials & Interfaces
- Accession number :
- edsair.doi...........2c9090855961e7557b27c476c0025c18