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Tuning the contact resistance in organic thin-film transistors with an organic–inorganic hybrid interlayer
- Source :
- Superlattices and Microstructures. 50:191-197
- Publication Year :
- 2011
- Publisher :
- Elsevier BV, 2011.
-
Abstract
- We demonstrated the tunable contact resistance in pentacene thin film transistor (TFT) by inserting an organic–inorganic hybrid interlayer between Au electrode and pentacene layer. The contact resistance of pentacene-TFT varies with concentration of pentacene-TFT varies with concentration of MoO x in organic–inorganic hybrid interlayer. MoO x in organic–inorganic hybrid interlayer. The contact resistance of the device with 55 wt% MoO x doped pentacene interlayer is about 7.8 times smaller than that of device without interlayer at the gate voltage of −20 V. Comparing the properties of pentacene-TFT without interlayer, the performance of the pentacene-TFT with 55 wt% MoO x doped pentacene was significantly improved: saturation mobility increased from 0.39 to 0.87 cm 2 /V s, threshold voltage reduced from −21.3 to −7.2 V, and threshold swing varied from 3.75 to 1.39 V/dec. Our results indicated that the organic–inorganic hybrid interlayer is an effective way to improve the performance of p -channel OTFTs.
- Subjects :
- Materials science
business.industry
Contact resistance
Doping
Condensed Matter Physics
Threshold voltage
Pentacene
chemistry.chemical_compound
chemistry
Thin-film transistor
Electrode
Optoelectronics
General Materials Science
Electrical and Electronic Engineering
business
Layer (electronics)
Saturation (magnetic)
Subjects
Details
- ISSN :
- 07496036
- Volume :
- 50
- Database :
- OpenAIRE
- Journal :
- Superlattices and Microstructures
- Accession number :
- edsair.doi...........2ca4a159baa57fcfd1d8884f4efaecc8