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Studies on Static Noise Margin and Scalability for Low-Power and High-Density Nonvolatile SRAM using Spin-Transfer-Torque (STT) MTJs

Authors :
Tetsuo Endoh
Takahiro Hanyu
F. Iga
Shinji Ikeda
H. Ohno
Takeo Ohsawa
Source :
Extended Abstracts of the 2011 International Conference on Solid State Devices and Materials.
Publication Year :
2011
Publisher :
The Japan Society of Applied Physics, 2011.

Subjects

Subjects :
Materials science
business.industry
Scalability
Electrical engineering
Spin-transfer torque
High density
Static noise margin
Static random-access memory
business
Power (physics)

Details

Database :
OpenAIRE
Journal :
Extended Abstracts of the 2011 International Conference on Solid State Devices and Materials
Accession number :
edsair.doi...........2cf10e54f3f4e64761048fc775d32c55
Full Text :
https://doi.org/10.7567/ssdm.2011.f-1-2
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