Analysis of high frequency characteristics of power inverter using accurate IGBT model based on datasheet and measurement

The output voltage and current from dc-ac inverter generate switching noises and may cause electromagnetic interference (EMI) problems to other electronic systems. To analyze high frequency switching behavior of an inverter accurately, an accurate IGBT model is essential. In this study, an insulated gate bipolar transistor (IGBT) is modeled using datasheet and measurement data to analyze the high frequency characteristics of a high-power full-bridge inverter. The effectiveness of the proposed IGBT model is verified by comparing the simulated results of the inverter using the proposed IGBT model with measured results in frequency domain.