A new doping method using metalorganics in chemical vapor deposition of 6H–SiC

Aluminum doping was performed using triethylaluminum as the dopant in chemical vapor deposition of 6H–silicon carbide (SiC). Measurements on the electrical and cathodoluminescent properties of the epilayers indicate that the doping concentration of aluminum can be easily controlled by the flow rate of metalorganics. Electroluminescence was also observed for the pn junctions prepared by the successive growth of a nondoped n layer and a p layer doped with aluminum using metalorganics.