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Effect of the Active Region and Waveguide Design on the Performance of Edge-Emitting Lasers Based on InGaAs/GaAs Quantum Well-Dots
- Source :
- Semiconductors. 55:333-340
- Publication Year :
- 2021
- Publisher :
- Pleiades Publishing Ltd, 2021.
-
Abstract
- Edge-emitting lasers with active regions based on novel InGaAs/GaAs quantum heterostructures of transitional dimensionality, i.e., quantum well-dots, which are intermediate in properties between quantum wells and quantum dots, are studied. It is shown that the rate of the lasing-wavelength blue shift decreases with increasing number of quantum well-dot layers in the active region and with increasing optical confinement factor as the cavity length decreases. In a laser with 10 quantum well-dot layers, the lasing-wavelength position remains within the limits of the fundamental optical transition down to the smallest cavity lengths (100 μm). In devices with a single quantum well-dot layer and/or with a low optical confinement factor, lasing directly switches from the ground state to waveguide states omitting excited states below ≤200 μm. Such an effect has not been observed in quantum-well- and quantum-dot lasers and can be attributed to the abnormally low density of excited states in quantum well-dots.
- Subjects :
- 010302 applied physics
Materials science
business.industry
Physics::Optics
Heterojunction
02 engineering and technology
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
021001 nanoscience & nanotechnology
Condensed Matter Physics
Laser
01 natural sciences
Waveguide (optics)
Atomic and Molecular Physics, and Optics
Electronic, Optical and Magnetic Materials
law.invention
Quantum dot
law
Excited state
0103 physical sciences
Optoelectronics
0210 nano-technology
business
Ground state
Lasing threshold
Quantum well
Subjects
Details
- ISSN :
- 10906479 and 10637826
- Volume :
- 55
- Database :
- OpenAIRE
- Journal :
- Semiconductors
- Accession number :
- edsair.doi...........2d3d13e394f5eefdc1f2208344315557