Low-Dark-Current Heterojunction Phototransistors with Long-Term Stable Passivation Induced by Neutralized (NH4)2S Treatment

MLA

Hon Rung Chen, et al. “Low-Dark-Current Heterojunction Phototransistors with Long-Term Stable Passivation Induced by Neutralized (NH4)2S Treatment.” Japanese Journal of Applied Physics, vol. 47, Jan. 2008, pp. 35–42. EBSCOhost, https://doi.org/10.1143/jjap.47.35.

APA

Hon Rung Chen, Wen Shiung Lour, Shao Yen Chiu, Jung Hui Tsai, Wei Tien Chen, Wen-Chau Liu, & M K Hsu. (2008). Low-Dark-Current Heterojunction Phototransistors with Long-Term Stable Passivation Induced by Neutralized (NH4)2S Treatment. Japanese Journal of Applied Physics, 47, 35–42. https://doi.org/10.1143/jjap.47.35

Chicago

Hon Rung Chen, Wen Shiung Lour, Shao Yen Chiu, Jung Hui Tsai, Wei Tien Chen, Wen-Chau Liu, and M K Hsu. 2008. “Low-Dark-Current Heterojunction Phototransistors with Long-Term Stable Passivation Induced by Neutralized (NH4)2S Treatment.” Japanese Journal of Applied Physics 47 (January): 35–42. doi:10.1143/jjap.47.35.