Effects of Nitrogen Impurity Concentration on Nitrogen-Vacancy Center Formation in 4H-SiC

MLA

Takeshi Ohshima, et al. “Effects of Nitrogen Impurity Concentration on Nitrogen-Vacancy Center Formation in 4H-SiC.” Materials Science Forum, vol. 1004, July 2020, pp. 349–54. EBSCOhost, https://doi.org/10.4028/www.scientific.net/msf.1004.349.

APA

Takeshi Ohshima, Kazutoshi Kojima, Yasuto Hijikata, Shin-ichiro Sato, Yuichi Yamazaki, & Takuma Narahara. (2020). Effects of Nitrogen Impurity Concentration on Nitrogen-Vacancy Center Formation in 4H-SiC. Materials Science Forum, 1004, 349–354. https://doi.org/10.4028/www.scientific.net/msf.1004.349

Chicago

Takeshi Ohshima, Kazutoshi Kojima, Yasuto Hijikata, Shin-ichiro Sato, Yuichi Yamazaki, and Takuma Narahara. 2020. “Effects of Nitrogen Impurity Concentration on Nitrogen-Vacancy Center Formation in 4H-SiC.” Materials Science Forum 1004 (July): 349–54. doi:10.4028/www.scientific.net/msf.1004.349.