1.55-μm buried-heterostructure VCSELs with InGaAsP/lnP-GaAs/AlAs DBRs on a GaAs substrate

Authors :: Kenji Kishi
Hiroshi Okamoto
Yoshitaka Ohiso
Ryuzo Iga
Chikara Amano
K. Tateno
Source :: IEEE Journal of Quantum Electronics. 37:1194-1202
Publication Year :: 2001
Publisher :: Institute of Electrical and Electronics Engineers (IEEE), 2001.
Abstract: We demonstrate 1.55-/spl mu/m buried-heterostructure (BH) vertical-cavity surface-emitting lasers (VCSELs) on a GaAs substrate. Thin-film wafer-fusion technology enables InP-based BH VCSELs to be fabricated on GaAs/AlAs distributed Bragg reflectors. Detailed investigations of the device resistance are also described. As a result of introducing BH and obtaining low device resistance, the threshold current density under CW operation shows the independence of mesa size due to a strong index guide and small noneffective current. A 5-/spl mu/m VCSEL exhibits a record threshold current of 380 /spl mu/A at 20/spl deg/C. This VCSEL also operates with single transverse mode up to the maximum optical output power.

Subjects :: Materials science
business.industry
Heterojunction
Substrate (electronics)
Condensed Matter Physics
Atomic and Molecular Physics, and Optics
Semiconductor laser theory
Transverse mode
Gallium arsenide
Vertical-cavity surface-emitting laser
chemistry.chemical_compound
Optics
Distributed Bragg reflector laser
chemistry
Optoelectronics
Electrical and Electronic Engineering
business
Current density

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