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Development of back-junction back-contact silicon solar cells based on industrial processes
- Source :
- Progress in Photovoltaics: Research and Applications. 25:441-451
- Publication Year :
- 2017
- Publisher :
- Wiley, 2017.
-
Abstract
- We have presented simplified industrial processes to fabricate high performance back-junction back-contact (BJBC) silicon solar cells. Good optical surface structures (solar averaged reflectance 2.5%) and high implied open-circuit voltage (0.695 V) have been realized in the BJBC cell precursors through wet chemical processing, co-diffusion, P ion implantation and annealing oxidation, as well as laser patterning and plasma enhanced chemical vapour deposition passivation processes. We have achieved a certified high efficiency of close to 22% on BJBC silicon solar cells with the size of 4.04 cm2 by using screen printing and co-firing technologies. The manufacturing process flow further successfully yields efficiency of around 21% BJBC silicon solar cells with enlarged sizes of 6 × 6 cm2. The present work has demonstrated that the commercialization of low-cost and high-efficiency BJBC solar cells is possible because we have used processes compatible with existing production lines. Copyright © 2017 John Wiley & Sons, Ltd.
- Subjects :
- 010302 applied physics
Production line
Materials science
Passivation
Silicon
Renewable Energy, Sustainability and the Environment
business.industry
Annealing (metallurgy)
chemistry.chemical_element
Nanotechnology
02 engineering and technology
021001 nanoscience & nanotechnology
Condensed Matter Physics
01 natural sciences
Electronic, Optical and Magnetic Materials
Deposition temperature
Ion implantation
chemistry
0103 physical sciences
Screen printing
Optoelectronics
Electrical and Electronic Engineering
0210 nano-technology
business
Voltage
Subjects
Details
- ISSN :
- 10627995
- Volume :
- 25
- Database :
- OpenAIRE
- Journal :
- Progress in Photovoltaics: Research and Applications
- Accession number :
- edsair.doi...........2e1f1c270b24913d5b0730331da74496
- Full Text :
- https://doi.org/10.1002/pip.2881