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Growth and characterization of tungsten carbide nanowires by thermal annealing of sputter-deposited WCx films

Authors :
Chuan Ping Juan
Shui-Jinn Wang
Huang-Chung Cheng
Kai-Ming Uang
Shu-Cheng Chang
Chao Hsuing Chen
Source :
Applied Physics Letters. 85:2358-2360
Publication Year :
2004
Publisher :
AIP Publishing, 2004.

Abstract

In this letter, the growth of dense W2C nanowires by a simple thermal annealing of sputter-deposited WCx films in nitrogen ambient is reported. Straight nanowires with a density of 250–260μm−2 and length∕diameter in the range of 0.2–0.3μm∕13–15nm were obtained from the 700°C-annealed samples, which exhibit good electron field emission characteristics with a typical turn-on field of about 1.7V∕μm. The self-catalytic growth of W2C nanowires is attributed to the formation of α-W2C phase caused by carbon depletion in the WCx films during thermal annealing.

Details

ISSN :
10773118 and 00036951
Volume :
85
Database :
OpenAIRE
Journal :
Applied Physics Letters
Accession number :
edsair.doi...........2e40f3817bea808b22a060b943b1227d
Full Text :
https://doi.org/10.1063/1.1791322