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Growth and characterization of tungsten carbide nanowires by thermal annealing of sputter-deposited WCx films
- Source :
- Applied Physics Letters. 85:2358-2360
- Publication Year :
- 2004
- Publisher :
- AIP Publishing, 2004.
-
Abstract
- In this letter, the growth of dense W2C nanowires by a simple thermal annealing of sputter-deposited WCx films in nitrogen ambient is reported. Straight nanowires with a density of 250–260μm−2 and length∕diameter in the range of 0.2–0.3μm∕13–15nm were obtained from the 700°C-annealed samples, which exhibit good electron field emission characteristics with a typical turn-on field of about 1.7V∕μm. The self-catalytic growth of W2C nanowires is attributed to the formation of α-W2C phase caused by carbon depletion in the WCx films during thermal annealing.
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 85
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi...........2e40f3817bea808b22a060b943b1227d
- Full Text :
- https://doi.org/10.1063/1.1791322