Direct deposition of multilayer graphene on dielectrics via solid-phase precipitation from carbon-doped cobalt with a copper capping layer

A method for producing a uniform multilayer graphene (MLG) film directly on SiO2 via solid-phase precipitation from carbon-doped cobalt (Co–C) with a Cu capping layer has been developed for a large scale integration (LSI) interconnect application. One advantage is that no transfer process is required. A 20 nm thick MLG film was grown uniformly from a 100 nm thick Co–C (20 at%) catalyst layer with a Cu capping layer. Cross-sectional TEM/EDX images revealed that the optimized Cu capping layer prevents Co agglomeration during annealing and promotes C precipitation on the SiO2 while eliminating it on the top surface of the catalytic metals.