On the pressure dependence and k-space localization of the deep level states in zinc blend semiconductors doped by the transition metals

An explanation is proposed for the unusual behaviour of the pressure dependent deep level position in Cr-doped InP. It is shown that this level is attached to the subsidiary L-minimum of the conduction band due to the large contribution of the L 1c -point vicinity in the electron density of states, and the symmetry properties of d-impurity states suppressing the hybridization with the band states in the central ⌝ 1c valley of the conduction band.