Influence of Working Temperature on the InSb/Si Heterojunction Photodetectors Performance

Traditional silicon-based photodetectors are limited by the band gap of silicon, which results in a limited working wavelength range. In this report, due to the excellent properties of Indium Antimonide, the InSb/Si heterojunction photodetectors are fabricated. Under ambient temperature of 280K, as-prepared photodetectors show a specific detectivity of 9.31011 cm Hz1/2/W, responsivity of 54 mA/W, on/off ratio of 5104 under the laser irradiation of 635 nm. In order to explore the influence of working temperature on device performance, the photoresponse at different temperatures was tested. This report proved that as the working temperature increases, the responsivity and specific detectivity of the device decrease, and the performance of the device becomes worse.