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Inclusion of Body Bias Effect in SPICE Modeling of 4H-SiC Integrated Circuit Resistors
- Source :
- Materials Science Forum. 924:962-966
- Publication Year :
- 2018
- Publisher :
- Trans Tech Publications, Ltd., 2018.
-
Abstract
- The DC electrical behavior of n-type 4H-SiC resistors used for realizing 500 °C durable integrated circuits (ICs) is studied as a function of substrate bias and temperature. Improved fidelity electrical simulation is described using SPICE NMOS model to simulate resistor substrate body bias effect that is absent from the SPICE semiconductor resistor model.
- Subjects :
- Materials science
Spice
02 engineering and technology
Integrated circuit
Discrete circuit
01 natural sciences
law.invention
Computer Science::Hardware Architecture
Computer Science::Emerging Technologies
law
0103 physical sciences
General Materials Science
Wafer
NMOS logic
Electronic circuit
010302 applied physics
business.industry
Mechanical Engineering
Electrical engineering
JFET
021001 nanoscience & nanotechnology
Condensed Matter Physics
Computer Science::Other
Mechanics of Materials
Resistor
0210 nano-technology
business
Subjects
Details
- ISSN :
- 16629752
- Volume :
- 924
- Database :
- OpenAIRE
- Journal :
- Materials Science Forum
- Accession number :
- edsair.doi...........2ecc0207a7aa0af0d966d420bc1104cd