Deep impurity levels in vanadium-doped Pb1−xMnxTe solid solutions

Measurements of electric and magnetic properties of Pb1−xMnxTe(V) solid solutions have been performed in the temperature range 4.2–300 K. It is demonstrated that the Fermi level position in this semiconductor is defined by formation of an impurity level within the bandgap of the material. Realization of a semi-insulating state at low temperatures is accompanied by absence of the persistent photoconductivity effect and by high homogeneity of electrical parameters in Pb1−xMnxTe(V) which is a unique combination. Measurements of electric properties in the ac field reveal that the main mechanism of the low temperature transport is the hopping conductivity. Pb1−xMnxTe(V) demonstrates a paramagnetic behavior at all temperatures, at least above 10 K.