A New High Current Gain 4H-SiC Bipolar Junction Transistor with Suppressed Surface Recombination Structure: SSR-BJT

MLA

Masaaki Shimizu, et al. “A New High Current Gain 4H-SiC Bipolar Junction Transistor with Suppressed Surface Recombination Structure: SSR-BJT.” Materials Science Forum, Mar. 2009, pp. 821–24. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........303b94c13c748271afd678ddb1ce3cc7&authtype=sso&custid=ns315887.

APA

Masaaki Shimizu, Maeyama Yusuke, Akihiko Horiuchi, Yuki Negoro, Hideki Hashimoto, Kensuke Iwanaga, Masashi Sato, Seiichi Yokoyama, Hiroaki Iwakuro, & Kenichi Nonaka. (2009). A New High Current Gain 4H-SiC Bipolar Junction Transistor with Suppressed Surface Recombination Structure: SSR-BJT. Materials Science Forum, 821–824.

Chicago

Masaaki Shimizu, Maeyama Yusuke, Akihiko Horiuchi, Yuki Negoro, Hideki Hashimoto, Kensuke Iwanaga, Masashi Sato, Seiichi Yokoyama, Hiroaki Iwakuro, and Kenichi Nonaka. 2009. “A New High Current Gain 4H-SiC Bipolar Junction Transistor with Suppressed Surface Recombination Structure: SSR-BJT.” Materials Science Forum, March, 821–24. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........303b94c13c748271afd678ddb1ce3cc7&authtype=sso&custid=ns315887.