In situ Study of Strain Relaxation Mechanisms During Lattice-mismatched InGaAs/GaAs Growth by X-ray Reciprocal Space Mapping

MLA

Seiji Fujikawa, et al. “In Situ Study of Strain Relaxation Mechanisms During Lattice-Mismatched InGaAs/GaAs Growth by X-Ray Reciprocal Space Mapping.” MRS Proceedings, vol. 1268, Jan. 2010. EBSCOhost, https://doi.org/10.1557/proc-1268-ee06-02.

APA

Seiji Fujikawa, Akihisa Sai, Takuo Sasaki, Masamitu Takahasi, Yoshio Ohshita, Hidetoshi Suzuki, & Masafumi Yamaguchi. (2010). In situ Study of Strain Relaxation Mechanisms During Lattice-mismatched InGaAs/GaAs Growth by X-ray Reciprocal Space Mapping. MRS Proceedings, 1268. https://doi.org/10.1557/proc-1268-ee06-02

Chicago

Seiji Fujikawa, Akihisa Sai, Takuo Sasaki, Masamitu Takahasi, Yoshio Ohshita, Hidetoshi Suzuki, and Masafumi Yamaguchi. 2010. “In Situ Study of Strain Relaxation Mechanisms During Lattice-Mismatched InGaAs/GaAs Growth by X-Ray Reciprocal Space Mapping.” MRS Proceedings 1268 (January). doi:10.1557/proc-1268-ee06-02.