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CVD diamond film detectors for α particles with a new electrode structure of reduced graphene oxide/Au
- Source :
- Materials Science in Semiconductor Processing. 91:260-266
- Publication Year :
- 2019
- Publisher :
- Elsevier BV, 2019.
-
Abstract
- (111)-oriented poly-crystalline diamond films (PCDs) have been deposited on Si substrates by MPCVD technology. The new electrode structure of reduced graphene oxide (RGO)/Au was successfully fabricated onto PCDs. Using the circular transmission line model (CTLM), the contact resistance of 6.6 Ω cm−2 was obtained for RGO/Au electrode on PCD surface, which was notably lower than that of 97.4 Ω cm−2 for Ti/Pt/Au electrode. Furthermore, two detectors with these two type electrodes were made respectively. The dark current, photocurrent and energy resolution of these two detectors under 5.5 MeV α particles irradiation from a 241Am source were observed. The results demonstrated that the fabrication of RGO/Au electrode onto PCD can realize a fine ohmic contact. The photocurrent of 58.7 nA for the detector with RGO/Au electrode had higher values than that of 8.8 nA for the detector with Ti/Pt/Au electrode at the bias voltage of 100 V respectively. Due to the realization of good contact on PCD surface with RGO/Au electrode, the energy resolution of 11.9% for the detector with RGO/Au electrode better than that of 24% for the detector with Ti/Pt/Au electrode can be obtained. Fabrication of the RGO/Au electrode on PCD may provide a feasible way to improve its detection performance under α particles irradiation.
- Subjects :
- Materials science
02 engineering and technology
Chemical vapor deposition
engineering.material
01 natural sciences
law.invention
law
0103 physical sciences
General Materials Science
Ohmic contact
010302 applied physics
Photocurrent
Graphene
business.industry
Mechanical Engineering
Contact resistance
Diamond
Biasing
021001 nanoscience & nanotechnology
Condensed Matter Physics
Mechanics of Materials
Electrode
engineering
Optoelectronics
0210 nano-technology
business
Subjects
Details
- ISSN :
- 13698001
- Volume :
- 91
- Database :
- OpenAIRE
- Journal :
- Materials Science in Semiconductor Processing
- Accession number :
- edsair.doi...........312b6f575a6dc3e8f7a5c49c3299b0e7