Ion track in fullerene C70 thin film: Dependence of electronic energy loss

Fullerene C70 thins films of thickness ∼150 nm are prepared on quartz and glass substrates with thermal deposition technique. The films are irradiated with different ions (Au, Ag, Ni, Si) having different energies in order to vary the electronic energy loss (Se). The samples are also irradiated with range of fluence i.e. 1×1012 ions/cm2 to 3×1013 ions/cm2 for each energetic ion beam. The damage cross sections due to ion beam irradiation with different energetic ions (120 MeV Ag, 120 MeV Au, 90 MeV Ni, 55 MeV Si and 55 MeV Ni) are determined with Raman spectroscopy. A curve is plotted between electronic energy loss (Se) and damage cross section (σ) that is helpful to determine the damage cross section in fullerene C70 for any electronic energy loss. In addition, radius (r) of ion track can be approximated for any Se value from the constructed curve between r and Se.