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Deposition of GaN thin film on ZnO/Si by DIBD method
- Source :
- Optoelectronics Letters. 2:282-283
- Publication Year :
- 2006
- Publisher :
- Springer Science and Business Media LLC, 2006.
-
Abstract
- The GaN thin film is successfully grown on the sample of ZnO/Si by dual ion beams deposition (DIBD) system. The thin film GaN/ZnO/Si is characterized by the in-situ X-ray photoelectron spectroscopy (XPS). It is shown that after a thin GaN film grown on the Zn/Si, the peaks of the Zn and O are not observed. This indicates that the GaN film can be successfully grown on the ZnO/Si by the dual ion beam deposition (DIBD) system associated with the pulsed laser deposition (PLD) method.
- Subjects :
- Materials science
business.industry
Condensed Matter Physics
Laser
Atomic and Molecular Physics, and Optics
Electronic, Optical and Magnetic Materials
Ion
law.invention
Pulsed laser deposition
Ion beam deposition
X-ray photoelectron spectroscopy
law
Optoelectronics
Electrical and Electronic Engineering
Thin film
business
Deposition (law)
Subjects
Details
- ISSN :
- 19935013 and 16731905
- Volume :
- 2
- Database :
- OpenAIRE
- Journal :
- Optoelectronics Letters
- Accession number :
- edsair.doi...........31e78341547365ad2f447e48c54804f9