Resistless electron beam lithography process for the fabrication of sub-50 nm silicide structures

We report on a study of the fabrication of submicron silicide structures with a resistless lithography technique. Several different metals can be used as a basis for producing silicide using this method; in this work, results will be discussed for both platinum and nickel silicide. The feasibility of producing nanostructures using polycrystalline silicon as a base growth layer for metal–oxide–semiconductor, and other device applications have also been demonstrated. Threshold doses for this method for submicron lines (