A diffusion-kinetic approach for the physical understanding of solid-state silicide formation in thin and thick films

The phase formation in planar binary systems is discussed in terms of the diffusion-kinetic approach. Application to Pt and Ni silicide thin and thick films confirms this approach and permits to interpret experimental data in terms of the physical mechanisms involved. A temperature-dependent critical thicknessW c for the transition of a compound to its subsequent one is discussed and expressed in terms of the activation energies for the growth and reaction rate.