Investigation of photoluminescence efficiency of n-type porous silicon by controlling of etching times and applied current densities

MLA

Sunghoon Jin, et al. “Investigation of Photoluminescence Efficiency of N-Type Porous Silicon by Controlling of Etching Times and Applied Current Densities.” Microelectronic Engineering, vol. 89, Jan. 2012, pp. 92–96. EBSCOhost, https://doi.org/10.1016/j.mee.2011.03.145.

APA

Sunghoon Jin, Bomin Cho, Hee-Cheol Kim, Honglae Sohn, Minwoo Hwang, & Bo-Yeon Lee. (2012). Investigation of photoluminescence efficiency of n-type porous silicon by controlling of etching times and applied current densities. Microelectronic Engineering, 89, 92–96. https://doi.org/10.1016/j.mee.2011.03.145

Chicago

Sunghoon Jin, Bomin Cho, Hee-Cheol Kim, Honglae Sohn, Minwoo Hwang, and Bo-Yeon Lee. 2012. “Investigation of Photoluminescence Efficiency of N-Type Porous Silicon by Controlling of Etching Times and Applied Current Densities.” Microelectronic Engineering 89 (January): 92–96. doi:10.1016/j.mee.2011.03.145.