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Bragg polariton luminescence from a GaN membrane embedded in all dielectric microcavity

Authors :
Eleftherios Iliopoulos
Eva Monroy
N. T. Pelekanos
A. Kostopoulos
Katerina Tsagaraki
Pavlos G. Savvidis
E. Trichas
Source :
Applied Physics Letters. 98:221101
Publication Year :
2011
Publisher :
AIP Publishing, 2011.

Abstract

We report on the development of a band gap-selective photochemical etching technique capable of producing 200 nm thick optical quality freestanding GaN membranes. The use of low electrolyte concentration combined with intense excitation by a laser source are shown to yield highly anisotropic etch profile with optical quality etched surfaces. Using this technique, high quality GaN microcavity is fabricated by embedding the GaN membrane inside an all-dielectric mirror cavity. In these structures, Bragg polariton photoluminescence is observed at room temperature.

Details

ISSN :
10773118 and 00036951
Volume :
98
Database :
OpenAIRE
Journal :
Applied Physics Letters
Accession number :
edsair.doi...........32e87df7d95a316008dd50cb67c95c6c