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Bragg polariton luminescence from a GaN membrane embedded in all dielectric microcavity
- Source :
- Applied Physics Letters. 98:221101
- Publication Year :
- 2011
- Publisher :
- AIP Publishing, 2011.
-
Abstract
- We report on the development of a band gap-selective photochemical etching technique capable of producing 200 nm thick optical quality freestanding GaN membranes. The use of low electrolyte concentration combined with intense excitation by a laser source are shown to yield highly anisotropic etch profile with optical quality etched surfaces. Using this technique, high quality GaN microcavity is fabricated by embedding the GaN membrane inside an all-dielectric mirror cavity. In these structures, Bragg polariton photoluminescence is observed at room temperature.
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 98
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi...........32e87df7d95a316008dd50cb67c95c6c