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Smart GaN platform: Performance & challenges
- Source :
- 2017 IEEE International Electron Devices Meeting (IEDM).
- Publication Year :
- 2017
- Publisher :
- IEEE, 2017.
-
Abstract
- This paper explores the next stage of GaN power devices with 2-level integration of peripheral low voltage active and passive devices. The 1st level consists of protection/control/driving circuits, which potentially improves the performance and overcomes the challenges to the power devices. The 2nd level integration has high-low side on-chip integration on a 100V technology platform. The challenge of channel modulation due to substrate bias sharing is effectively eliminated by the invented new scheme. The system efficiency of DC-DC buck converter using such scheme is enhanced with lower on-state resistance and good stability.
- Subjects :
- 010302 applied physics
Scheme (programming language)
Buck converter
business.industry
Computer science
020208 electrical & electronic engineering
Electrical engineering
02 engineering and technology
01 natural sciences
Aluminum gallium nitride
0103 physical sciences
0202 electrical engineering, electronic engineering, information engineering
Power semiconductor device
Channel modulation
business
Low voltage
computer
computer.programming_language
Electronic circuit
Subjects
Details
- Database :
- OpenAIRE
- Journal :
- 2017 IEEE International Electron Devices Meeting (IEDM)
- Accession number :
- edsair.doi...........3359bea377394fc519c97cbda076c7a6