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Light absorption enhancement in polymer solar cells with nano-Ag

Authors :
Gao Mangmang
Yuan Hai-Wen
Li Xue-Sheng
Li Jin
He Li-Jun
Liang Sen
Li Guo-Long
Source :
Acta Physica Sinica. 62:197202
Publication Year :
2013
Publisher :
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, 2013.

Abstract

The thickness of an active layer is limited by its low mobility of carriers in a polymer solar cell composed of the blend bulk-heterojunction formed by P3HT as donor material and PCBM as acceptor material, which can affect the light absorption of the polymer solar cell. Metal nanocrystals-doped polymer active layer can enhance its inner electrical field and absorb light due to the surface plasmon resonance (SPR) effect of the nanocrystals. Two-dimensional electrical field distributions in the polymer solar cells are simulated based on finite difference time domain (FDTD) approach, under the assumption that the diameter of doping nano-Ag is 50 nm, the distance between two nanocrystals is 50nm and the incident light wavelength is 400 nm or 500 nm. The electrical field distributions over the cross-section of nano-Ag are also simulated at the incident light angle of 15°, 45°, 60°, respectively. The light absorption of different devices are calculated, in which the sizes of nano-Ag take 10 nm, 20 nm and 50 nm, respectively, Particles of nano-Ag are dispersed in PEDOT:PSS layer. Moreover, the light absorption is calculated at the incident light angles of 15°, 45°, 60°, respectively. Results show that the electrical field is redistributed due to the SPR effect caused by nano-Ag in the polymer active layer. A larger size of nano-Ag leads to light scattering in a wider angle, thus results in more light absorption by the device. Here, the colloid of nano-Ag is prepared from an organic salt of Ag, and the polymer solar cell with nano-Ag is fabricated in the structure of glass /ITO (~100 nm) /PEDOT:PSS (40 nm) /P3HT:PCBM (~100 nm)/(nano-Ag) /LiF (1 nm) /Al (120 nm). Furthermore, experimental results show that the nano-Ag doped in P3HT:PCBM layer increases light absorption and improves the electrical performance of the device, which enhances the incident photon conversion efficiency (IPCE) in spectrum at 520nm by 17.9%.

Details

ISSN :
10003290
Volume :
62
Database :
OpenAIRE
Journal :
Acta Physica Sinica
Accession number :
edsair.doi...........342179e6c447eb9c77ef0adabad8309c