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Characterization of 600V/650V Commercial SiC Schottky Diodes at Extremely High Temperatures
- Source :
- 2019 IEEE 10th International Symposium on Power Electronics for Distributed Generation Systems (PEDG).
- Publication Year :
- 2019
- Publisher :
- IEEE, 2019.
-
Abstract
- This paper evaluates the thermal characterization of late generation SiC schottky diodes for application of power electronics charging and operation systems. 600V/650V SiC Diodes are tested from 3 well-known manufactures: Wolfspeed, Infineon and Rohm. A comprehensive study is performed for a wide temperature range from 20°C (room temperature) up to 500°C, aiming to find the absolute maximum parameters of SiC schottky diodes at extremely high temperature environments. Both static and dynamic characterization are evaluated, which exhibit the performance and reliability of SiC schottky diodes for high temperature application conditions.
- Subjects :
- Materials science
business.industry
020209 energy
020208 electrical & electronic engineering
Schottky diode
02 engineering and technology
Atmospheric temperature range
Characterization (materials science)
Reliability (semiconductor)
Power electronics
Thermal
0202 electrical engineering, electronic engineering, information engineering
Absolute maximum
Optoelectronics
business
Diode
Subjects
Details
- Database :
- OpenAIRE
- Journal :
- 2019 IEEE 10th International Symposium on Power Electronics for Distributed Generation Systems (PEDG)
- Accession number :
- edsair.doi...........34f44de0128ddedcfd6ced07b2c312d1