Characterization of 600V/650V Commercial SiC Schottky Diodes at Extremely High Temperatures

This paper evaluates the thermal characterization of late generation SiC schottky diodes for application of power electronics charging and operation systems. 600V/650V SiC Diodes are tested from 3 well-known manufactures: Wolfspeed, Infineon and Rohm. A comprehensive study is performed for a wide temperature range from 20°C (room temperature) up to 500°C, aiming to find the absolute maximum parameters of SiC schottky diodes at extremely high temperature environments. Both static and dynamic characterization are evaluated, which exhibit the performance and reliability of SiC schottky diodes for high temperature application conditions.