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The impact of trapping centers on AlGaN/GaN resonant tunneling diode

Authors :
Xiaoxian Liu
Jun Luo
Lin-An Yang
Yue Hao
Zhangming Zhu
Haoran Chen
Source :
IEICE Electronics Express. 10:20130588-20130588
Publication Year :
2013
Publisher :
Institute of Electronics, Information and Communications Engineers (IEICE), 2013.

Subjects

Subjects :
Materials science
business.industry
Resonant-tunneling diode
Optoelectronics
Algan gan
Trapping
Electrical and Electronic Engineering
Condensed Matter Physics
business
Quantum well
Electronic, Optical and Magnetic Materials

Details

ISSN :
13492543
Volume :
10
Database :
OpenAIRE
Journal :
IEICE Electronics Express
Accession number :
edsair.doi...........357b0c0017a483f85a19e7a6ed1cedb5
Full Text :
https://doi.org/10.1587/elex.10.20130588
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