High-gain multi-finger power n-MODFET on Si substrate

A multi-finger n-type Si/SiGe modulation-doped field-effect transistor fabricated on Si substrate for RF power amplification is demonstrated for the first time. Load-pull measurements performed at 2 GHz on a ten-finger device with a gate length of 0.3 μm and a gate width of 750 μm show a maximum output power of 14 dBm and power gain of 16 dB at 1 dB compression point with power added efficiency of 15%.