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Light-Induced Tellurium Enrichment on CdZnTe Crystal Surfaces Detected by Raman Spectroscopy
- Source :
- Journal of Electronic Materials. 37:1438-1443
- Publication Year :
- 2008
- Publisher :
- Springer Science and Business Media LLC, 2008.
-
Abstract
- CdZnTe (CZT) crystals can be grown under controlled conditions to produce high-quality crystals to be used as room-temperature radiation detectors. Even the best crystal growth methods result in defects, such as tellurium secondary phases, that affect the crystal's performance. In this study, CZT crystals were analyzed by micro-Raman spectroscopy. The growth of Te rich areas on the surface was induced by low-power lasers. The growth was observed versus time with low-power Raman scattering and was observed immediately under higher-power conditions. The detector response was also measured after induced Te enrichment.
- Subjects :
- Physics::Instrumentation and Detectors
Scattering
Analytical chemistry
Physics::Optics
chemistry.chemical_element
Crystal growth
Condensed Matter Physics
Electronic, Optical and Magnetic Materials
Semiconductor detector
Crystal
symbols.namesake
Crystallography
chemistry
Materials Chemistry
symbols
Electrical and Electronic Engineering
Raman spectroscopy
Tellurium
Spectroscopy
Raman scattering
Subjects
Details
- ISSN :
- 1543186X and 03615235
- Volume :
- 37
- Database :
- OpenAIRE
- Journal :
- Journal of Electronic Materials
- Accession number :
- edsair.doi...........35fe0c73b9ee8cb1f199861a5fe6a1d3
- Full Text :
- https://doi.org/10.1007/s11664-008-0448-x