Scaling of SiGe BiCMOS Technologies for Applications above 100 GHz

Authors :: Pascal Chevalier
J. Rosa
Christophe Gaquiere
G. Avenier
E. Canderle
F. Pourchon
N. Derrier
Andreea Balteanu
Didier Celi
A. Pottrain
Y. Carminati
A. Montagne
Daniel Gloria
Sorin P. Voinigescu
Alain Chantre
E. Dacquay
I. Sarkas
Thomas Lacave
Source :: 2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).
Publication Year :: 2012
Publisher :: IEEE, 2012.
Abstract: This paper summarizes the technological developments carried out in STMicroelectronics to raise the fT / fMAX of SiGe HBTs up to ~ 300 GHz / 400 GHz. The noise and power performance in the W-band of different SiGe HBT generations are compared along with CML ring oscillators and circuit results up to the D band.

Subjects :: D band
Materials science
business.industry
Semiconductor materials
Heterojunction bipolar transistor
Power performance
Optoelectronics
Bicmos integrated circuits
BiCMOS
business
Scaling
Noise (electronics)

Database :: OpenAIRE
Journal :: 2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)
Accession number :: edsair.doi...........36511f95107b8b975820f5af641c457b
Full Text :: https://doi.org/10.1109/csics.2012.6340083