Comparison of Metallic NW and Evaporated Contact for THz Detector Modules Based on an InGaAs Schottky diode

In this paper we report a new terahertz (THz) Schottky detector module based on vertically contacted highly doped (1 x 1018 cm-3) indium gallium arsenide (InGaAs) by using a small diameter (100 nm) silver nanowire (NW) as air-bridge contact and a standard evaporated contact (SD). These Schottky diodes were placed on a silicon lens and integrated with a preamplifier on a printed circuit board (PCB). Furthermore, three different antennas for this detector module were investigated.