Oxygen elimination effect in silicon thin film by neutral beam assisted CVD system at room temperature

Solar cells with multi-junction structures employing various band gap layers are nowadays issue to achieve higher efficiency. We have prepared neutral beam assisted CVD (NBaCVD) deposited a-Si:H which has different oxygen contents as reflector bias and termination capacitor. The oxygen supplied by sputtering of quartz tube(shied for internal ICP antenna) as control of self bias. To control self sputtering of quartz we attached optimized valued capacitor between ends of antenna and ground. As increase of reflector bias directly related the energy of hydrogen, which is reflected from reflector, is increase then the oxygen contents reduced and transform the film structure as amorphous to nano-crystalline. The FTIR, XPS, optical band gap show the changes of oxygen and a-Si:H state as effect of energetic hydrogen reaction with oxygen and Si x -H y bond.