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Evaluation of stress stabilities in amorphous In–Ga–Zn–O thin-film transistors: Effect of passivation with Si-based resin

Authors :
Mami N. Fujii
Aya Hino
Yukiharu Uraoka
Hiroshi Goto
Kazushi Hayashi
Mototaka Ochi
Toshihiro Kugimiya
Source :
Japanese Journal of Applied Physics. 57:02CB06
Publication Year :
2017
Publisher :
IOP Publishing, 2017.

Abstract

Fabrication process conditions of a passivation (PV) layer correlated with stress stabilities of amorphous In–Ga–Zn–O (a-IGZO) thin-film transistors (TFTs). In etch-stop layer (ESL)-TFTs, by inserting a Si-based resin between SiN x and SiO x PV layers, the peak intensity in the photoinduced transient spectroscopy (PITS) spectrum was notably reduced. This suggested the suppression of hydrogen incorporation into a-IGZO, which led to the improvement of stability under negative bias thermal illumination stress (NBTIS). In contrast, the hydrogen-related defects in the a-IGZO were easily formed by the back-channel etch (BCE) process. Furthermore, it was found that, under NBTIS, the transfer curves of the BCE-TFTs shifted in parallel owing to the positive fixed charge located in the back channel of the a-IGZO TFTs. The hump-shaped shift increased with stress time. This is because hydrogen atoms located at the back-channel surfaces of the a-IGZO and/or PV layers were incorporated into the channel region of the BCE-TFTs and induced the hydrogen-related defects.

Details

ISSN :
13474065 and 00214922
Volume :
57
Database :
OpenAIRE
Journal :
Japanese Journal of Applied Physics
Accession number :
edsair.doi...........378657c823a0eca7b4b289f988f909cc
Full Text :
https://doi.org/10.7567/jjap.57.02cb06