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InP Based Quantum Dot/Dash Material for High Speed Optoelectronic Devices: Recent Results and Prospects

Authors :
Gadi Eisenstein
Johann Peter Reithmaier
Source :
European Conference and Exhibition on Optical Communication.
Publication Year :
2012
Publisher :
OSA, 2012.

Abstract

A review is given on the recent progress in 1.55 μm QD laser material based on an improved geometry control of QDs and its application in high speed optoelectronic devices. Also a prospect will be given for the realization of high speed directly modulated QD lasers having the potential to reach data rates of 25 GBit/s.

Details

Database :
OpenAIRE
Journal :
European Conference and Exhibition on Optical Communication
Accession number :
edsair.doi...........37cfd3c0113207cf5eacf734b8498099
Full Text :
https://doi.org/10.1364/eceoc.2012.we.3.f.1