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Unstable behavior of Ga atoms in ZnSe epitaxial layers

Authors :
H. Okuyama
Katsuhiro Akimoto
Tomonori Hino
Takao Miyajima
Y. Abe
T. Haga
Source :
Journal of Applied Physics. 82:1196-1200
Publication Year :
1997
Publisher :
AIP Publishing, 1997.

Abstract

Using ion-channeling methods, the thermal stability of crystallinity for heavily Ga-doped ZnSe epitaxial layers grown on GaAs (100) substrates was investigated. Some distinctive features were found: The crystallinity of as-grown heavily Ga-doped ZnSe is similar to that of undoped ZnSe. After thermal annealing at 450 °C, the crystallinity of Ga-doped ZnSe is degraded, although that of undoped ZnSe is not significantly changed. It is expected that doped Ga atoms are displaced from the regular lattice sites after annealing. The degree of this degradation depends on the crystallinity of the as-grown Ga-doped ZnSe itself. These results indicate the degradation of the crystallinity for Ga-doped ZnSe epilayers is mainly caused by the interaction between the doped Ga atoms and grown-in point defects in the epitaxial layers.

Details

ISSN :
10897550 and 00218979
Volume :
82
Database :
OpenAIRE
Journal :
Journal of Applied Physics
Accession number :
edsair.doi...........37fdc36c3bca43959b6d4c458989744b
Full Text :
https://doi.org/10.1063/1.365888