Direct Evidence for Stability of Tetrahedral Interstitial Er in Si up to 900°C

Authors :: Ulrich Wahl
J.G. Correia
G. Langouche
J.G. Marques
A. Vantomme
null the ISOLDE Collaboration
Source :: Materials Science Forum. :1503-1508
Publication Year :: 1997
Publisher :: Trans Tech Publications, Ltd., 1997.

Subjects :: Materials science
Silicon
Direct evidence
Mechanical Engineering
chemistry.chemical_element
Mineralogy
Electroluminescence
Condensed Matter Physics
Ion implantation
chemistry
Mechanics of Materials
Tetrahedron
Physical chemistry
General Materials Science

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