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A Novel IGBT Structure With Floating N-Doped Buried Layer in P-Base to Suppress Latch-Up
- Source :
- IEEE Electron Device Letters. 37:1174-1177
- Publication Year :
- 2016
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2016.
-
Abstract
- The insulated-gate bipolar transistor (IGBT) has a parasitic thyristor. Latch-up can occur when the current density exceeds a particular current density. Conventional methods employed to increase the latching current density will lead to some other performance degradations. To overcome these problems and further increase the latching current density of IGBT, a novel IGBT with a floating N-doped buried layer in P-base is proposed. By implanting a floating N-doped buried layer in the P-base, the hole current flowing underneath the N+ emitter can be reduced significantly. Thus, the current density that is needed to trigger the latch-up of the parasitic thyristor increases. Numerical simulation results show that the proposed IGBT can increase the latching current density by more than 100% without compromising the output and switching characteristics when compared with the conventional IGBT.
- Subjects :
- 010302 applied physics
Gate turn-off thyristor
Materials science
business.industry
020208 electrical & electronic engineering
Bipolar junction transistor
Electrical engineering
Thyristor
Hardware_PERFORMANCEANDRELIABILITY
02 engineering and technology
Insulated-gate bipolar transistor
01 natural sciences
Electronic, Optical and Magnetic Materials
Current injection technique
0103 physical sciences
Hardware_INTEGRATEDCIRCUITS
0202 electrical engineering, electronic engineering, information engineering
Optoelectronics
Hardware_ARITHMETICANDLOGICSTRUCTURES
Electrical and Electronic Engineering
Current (fluid)
business
Current density
Hardware_LOGICDESIGN
Common emitter
Subjects
Details
- ISSN :
- 15580563 and 07413106
- Volume :
- 37
- Database :
- OpenAIRE
- Journal :
- IEEE Electron Device Letters
- Accession number :
- edsair.doi...........38743306dd552b4933eee5b9743d737e