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Silica gel-coated silicon carbide layer deposited by atmospheric plasma spraying
- Source :
- Journal of the Taiwan Institute of Chemical Engineers. 110:173-181
- Publication Year :
- 2020
- Publisher :
- Elsevier BV, 2020.
-
Abstract
- Atmospheric plasma spraying (APS) of silicon carbide (SiC) is a challenging task due to the severe decomposition behaviour of the SiC. Previous studies, which utilized APS technique, mixed SiC powder with metals and/or metal oxides to prepare SiC coating. None of them sprayed silica gel-coated SiC and examined the characteristics of the coatings. In this work, silica gel-coated SiC, sodium dodecyl sulfate (SDS) enhanced silica gel-coated SiC, and the combination of alumina (Al2O3) and SiC were prepared and then deposited onto a titanium (Ti) plate by APS. Scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDS), X-ray diffraction (XRD), adhesion and acid resistance test were performed to analyse the characteristics of modified powders and coatings. We found that compared to Commercial-SiC coatings, all the modified SiC coatings not only increase the coating thickness but also enhance the adhesion force between the coating and substrate; furthermore, the SDS-modified sample exhibits good sulfuric acid (H2SO4) resistance. On the other hand, samples containing Al2O3 showed a significant increase in coating thickness and adhesion force, despite a bit lower acid resistance. In sum, we believe that compared to silica-gel coated samples, Al2O3 contained samples are more suitable for industrial application.
- Subjects :
- Materials science
Silica gel
Scanning electron microscope
General Chemical Engineering
Atmospheric-pressure plasma
Sulfuric acid
02 engineering and technology
General Chemistry
Substrate (electronics)
engineering.material
010402 general chemistry
021001 nanoscience & nanotechnology
01 natural sciences
0104 chemical sciences
chemistry.chemical_compound
stomatognathic system
Coating
chemistry
Chemical engineering
engineering
Silicon carbide
0210 nano-technology
Layer (electronics)
Subjects
Details
- ISSN :
- 18761070
- Volume :
- 110
- Database :
- OpenAIRE
- Journal :
- Journal of the Taiwan Institute of Chemical Engineers
- Accession number :
- edsair.doi...........3898010b19ba266f285bdc8828e1be21
- Full Text :
- https://doi.org/10.1016/j.jtice.2020.04.003