Preparation and characterization of novel CuClSe2 semiconductor thin film

CuClSe2 was synthesized by solid-state reaction between copper chloride and selenium at 300 °C. CuClSe2 thin film was prepared on a glass substrate by pulsed laser deposition (PLD) method. XRD (X-ray diffraction) analysis revealed that the CuClSe2 thin film has a preferred surface orientation parallel to (006). The transmittance and reflectance spectra of the film indicated that the compound is an indirect band gap material; the energy band gap is about 1.45 eV; its absorption coefficients are in the range of 104–105 cm− 1 when the wavelength is shorter than 720 nm. The melting point of CuClSe2 is about 328 °C. These results show that CuClSe2 is a potential absorber layer material applied in solar cells.