Activation and Defect Reduction of Hydrogenated In–Ga–Zn–O Thin Film Transistor at Low Temperature (150 °C)

MLA

M. Furuta, et al. “Activation and Defect Reduction of Hydrogenated In–Ga–Zn–O Thin Film Transistor at Low Temperature (150 °C).” Extended Abstracts of the 2018 International Conference on Solid State Devices and Materials, Sept. 2018. EBSCOhost, https://doi.org/10.7567/ssdm.2018.n-3-05.

APA

M. Furuta, Y. Hirota, Y. Magari, & S.G.M. Aman. (2018). Activation and Defect Reduction of Hydrogenated In–Ga–Zn–O Thin Film Transistor at Low Temperature (150 °C). Extended Abstracts of the 2018 International Conference on Solid State Devices and Materials. https://doi.org/10.7567/ssdm.2018.n-3-05

Chicago

M. Furuta, Y. Hirota, Y. Magari, and S.G.M. Aman. 2018. “Activation and Defect Reduction of Hydrogenated In–Ga–Zn–O Thin Film Transistor at Low Temperature (150 °C).” Extended Abstracts of the 2018 International Conference on Solid State Devices and Materials, September. doi:10.7567/ssdm.2018.n-3-05.