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Excitation wavelength dependence of terahertz emission from InN and InAs
- Source :
- Applied Physics Letters. 89:141115
- Publication Year :
- 2006
- Publisher :
- AIP Publishing, 2006.
-
Abstract
- The authors report on the excitation wavelength dependence of terahertz emission from n-InN and bulk p-InAs pumped with femtosecond pulses tunable from 800to1500nm. The terahertz amplitude, normalized to pump and probe power, from both narrow band gap semiconductors remains relatively constant over the excitation wavelength range. In addition, terahertz radiation from In- and N-face InN samples with bulk carrier concentrations ranging from 1017to1019cm−3 is also investigated, showing a strong dependence of terahertz emission on bulk carrier concentration. The experimental results agree well with calculations based on drift-diffusion equations incorporating momentum conservation and relaxation.
- Subjects :
- Materials science
Physics and Astronomy (miscellaneous)
Condensed Matter::Other
Terahertz radiation
business.industry
Far-infrared laser
Physics::Optics
Terahertz spectroscopy and technology
Photomixing
Optical pumping
Condensed Matter::Materials Science
Semiconductor
Femtosecond
Optoelectronics
business
Terahertz time-domain spectroscopy
Subjects
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 89
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi...........3b61907061a07277d37e38c5a63aa4c1