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Degradation of Quality Factor of Superconducting Resonators by Remaining Metallic Film and Improved Fabrication Process Using Caldera Planarization
- Source :
- IEEE Transactions on Applied Superconductivity. 29:1-6
- Publication Year :
- 2019
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2019.
-
Abstract
- An important figure of merit in microwave superconducting quantum interference device multiplexer (MW-MUX) is the quality factor of superconducting resonators. In advanced industrial science and technology (AIST), the intrinsic quality factor ${\boldsymbol{Q}_{{\mathbf i}}}$ of the resonators in the MW-MUX chips degraded significantly compared to those in the resonator-only chips owing to something during the fabrication process. In this study, we have investigated the damage process by conducting controlled experiments and an SEM-EDX analysis. As a result, we have confirmed that the metallic layers (Pd and Nb) were not removed completely and remained along the edge of the resonator, which resulted in the degradation of ${\boldsymbol{Q}_{{\mathbf i}}}$ . Further, we have invented a new process to overcome this imperfection during the removal of Pd layer using so called “caldera planarization”. The metal line that remained along the edge was not observed in the MW-MUX chips fabricated using this improved process. Finally, we have achieved ${\boldsymbol{Q}_{{\mathbf i}}}$ as high as that of resonator-only chips using the improved process.
- Subjects :
- Materials science
Fabrication
business.industry
Edge (geometry)
Condensed Matter Physics
01 natural sciences
Electronic, Optical and Magnetic Materials
Resonator
Chemical-mechanical planarization
0103 physical sciences
Figure of merit
Optoelectronics
Electrical and Electronic Engineering
010306 general physics
business
Science, technology and society
Layer (electronics)
Microwave
Subjects
Details
- ISSN :
- 23787074 and 10518223
- Volume :
- 29
- Database :
- OpenAIRE
- Journal :
- IEEE Transactions on Applied Superconductivity
- Accession number :
- edsair.doi...........3bbdc559a4267511b5c02ecb2ccc225c
- Full Text :
- https://doi.org/10.1109/tasc.2019.2905144