Cite
Low-Temperature Ohmic Contact Formation in AlN/GaN HEMT Using Microwave Annealing
MLA
Min-Zhi Lin, et al. “Low-Temperature Ohmic Contact Formation in AlN/GaN HEMT Using Microwave Annealing.” IEEE Transactions on Electron Devices, vol. 64, Mar. 2017, pp. 1385–89. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........3bc638cfbaf3d665d2550b9e7934abf6&authtype=sso&custid=ns315887.
APA
Min-Zhi Lin, Pengfei Wang, Sheng-Xun Zhao, Lin-Qing Zhang, & Zhuo Liu. (2017). Low-Temperature Ohmic Contact Formation in AlN/GaN HEMT Using Microwave Annealing. IEEE Transactions on Electron Devices, 64, 1385–1389.
Chicago
Min-Zhi Lin, Pengfei Wang, Sheng-Xun Zhao, Lin-Qing Zhang, and Zhuo Liu. 2017. “Low-Temperature Ohmic Contact Formation in AlN/GaN HEMT Using Microwave Annealing.” IEEE Transactions on Electron Devices 64 (March): 1385–89. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........3bc638cfbaf3d665d2550b9e7934abf6&authtype=sso&custid=ns315887.