Toward device-quality GaAs growth by molecular beam epitaxy on offcut Ge/Si[sub 1−x]Ge[sub x]/Si substrates

MLA

Eugene A. Fitzgerald, et al. “Toward Device-Quality GaAs Growth by Molecular Beam Epitaxy on Offcut Ge/Si[Sub 1−x]Ge[Sub x]/Si Substrates.” Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol. 16, May 1998, p. 1471. EBSCOhost, https://doi.org/10.1116/1.589968.

APA

Eugene A. Fitzgerald, Thomas A. Langdo, Steven A. Ringel, S. M. Ting, R. M. Sieg, S. B. Samavedam, & Matthew T. Currie. (1998). Toward device-quality GaAs growth by molecular beam epitaxy on offcut Ge/Si[sub 1−x]Ge[sub x]/Si substrates. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 16, 1471. https://doi.org/10.1116/1.589968

Chicago

Eugene A. Fitzgerald, Thomas A. Langdo, Steven A. Ringel, S. M. Ting, R. M. Sieg, S. B. Samavedam, and Matthew T. Currie. 1998. “Toward Device-Quality GaAs Growth by Molecular Beam Epitaxy on Offcut Ge/Si[Sub 1−x]Ge[Sub x]/Si Substrates.” Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 16 (May): 1471. doi:10.1116/1.589968.