Fabrication and Characterization of High Power 1064-nm DFB Lasers

A ridge waveguide distributed-feedback laser emitting at 1064 nm is demonstrated. Two low-temperature-grown In0.21Ga0.79As/GaAs quantum wells are employed as the active layer. A second-order grating is formed by holographic photolithography and wet-etching. The laser operates at a single-mode up to 255 mA, corresponding to an output power of 90 mW.