Phenomenological Compact Model for QM Charge Centroid in Multigate FETs

We present a phenomenological compact model of the inversion charge centroid considering both the structural and electrical confinements in multigate FETs. The developed new model shows a good match with Technology-CAD (TCAD) data for both physical parameters such as fin thickness in FinFET and wire radius in cylindrical FET, channel doping, and electrical bias variation. With the introduction of fitting parameters, the model is capable of handling hole and electron carriers, various channel materials, and process variations, such as fin shape, etc.